| PART |
Description |
Maker |
| IRG4PC60F |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRG4RC10 IRG4RC10K IRG4RC10KTR IRG4RC10KTRL IRG4RC |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak package
|
International Rectifier
|
| IRG4PC40U IRG4PC40U-EPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
40 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
|
Vishay Intertechnology, Inc.
International Rectifier
|
| IRG4IBC20W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4BC20K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) 绝缘栅双极晶体管VCES和\u003d 600V电压的Vce（on）典\u003d 2.27V，@和VGE \u003d 15V的，集成电路\u003d 9.0,9.0
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4RC10S IRG4RC10 IRG4RC10STR IRG4RC10STRL IRG4RC |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4BC20FD IRG4BC20FDPBF |
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
|
International Rectifier
IRF
|
